Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond

Remeš, Z., Stuchlík, J., Stuchlíková, T.-H., Dragounová, K., Ashcheulov, P., Taylor, A., Mortet, V., Poruba, A. Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond. Physica Status Solidi A. 2019, 216(21), 1-6), 1900241. ISSN 1862-6300. E-ISSN 1862-6319. Dostupné z: doi: 10.1002/pssa.201900241.