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Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications
- 1.Zíková, M., Hospodková, A., Pangrác, J., Oswald, J., Hulicius, E. Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications. Journal of Crystal Growth. 2017, 464(Apr), 59-63. ISSN 0022-0248. E-ISSN 1873-5002. Dostupné z: doi: 10.1016/j.jcrysgro.2016.11.110
Počet záznamů: 1