Počet záznamů: 1
Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
- 1.Hara, K., Affolder, A.A., Allport, P.P., Bates, R., Betancourt, C., Böhm, J., Brown, H., Buttar, C., Carter, J. R., Casse, G., Mikeštíková, M. Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments. Nuclear Instruments & Methods in Physics Research Section A. 2011, 636(1), "S83"-"S89". ISSN 0168-9002. E-ISSN 1872-9576. Dostupné z: doi: 10.1016/j.nima.2010.04.090.
Počet záznamů: 1