Počet záznamů: 1
Development of n-on-p silicon sensors for very high radiation environments
- 1.Unno, Y., Affolder, A.A., Allport, P.P., Bates, R., Betancourt, C., Böhm, J., Brown, H., Buttar, C., Carter, J. R., Casse, G., Mikeštíková, M. Development of n-on-p silicon sensors for very high radiation environments. Nuclear Instruments & Methods in Physics Research Section A. 2011, 636(1), "S24"-"S30". ISSN 0168-9002. E-ISSN 1872-9576. Dostupné z: doi: 10.1016/j.nima.2010.04.080.
Počet záznamů: 1