Počet záznamů: 1
The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene
- 1.Kalbáč, M., Reina-Cecco, A., Farhat, H., Kong, J., Kavan, L., Dresselhaus, M. S. The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene. ACS Nano. 2010, 4(10), 6055-6063. ISSN 1936-0851. E-ISSN 1936-086X. Dostupné z: doi: 10.1021/nn1010914
Počet záznamů: 1