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Characterization of InAs/AlSb tunelling double barrier heterostructure by reverse electron emission spectroscopy with InAs as base electrode
- 1.Vaniš, J., Chow, D. H., Šroubek, F., McGill, T. C. M., Walachová, J. Characterization of InAs/AlSb tunelling double barrier heterostructure by reverse electron emission spectroscopy with InAs as base electrode. Physica Status Solidi C. 2005, 2(4), 1444-1448. ISSN 1610-1634.
Počet záznamů: 1