Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure

HÁJEK, F., HOSPODKOVÁ, A., OSWALD, J., SLAVICKÁ ZÍKOVÁ, M. Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure. In: DRAGOUNOVÁ, K., KOUBSKÝ, T., KALVODA, L., ČAPEK, J., TROJAN, K., KOLENKO, P., eds. Proceedings of the 8th Student scientific conference of solid state engineering and materials. Praha: České vysoké učení technické v Praze, 2018, s. 42-45. ISBN 978-80-01-06511-2.