Increasing scintillator active region thickness by InGaN/GaN QW number

VANĚK, T., HOSPODKOVÁ, A., HUBÁČEK, T., KULDOVÁ, K., OSWALD, J., PANGRÁC, J., DOMINEC, F., ZÍKOVÁ, M., VETUSHKA, A. Increasing scintillator active region thickness by InGaN/GaN QW number. In: Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018, s. 151-151.