High polarization and wake-up free ferroelectric characteristics in ultrathin Hf.sub.0.5./sub.Zr.sub.0.5./sub.O.sub.2./sub. devices by control of oxygen-deficient layer

YADAV, M., KASHIR, A., OH, S., NIKAM, R.D., KIM, H., JANG, H., HWANG, H. High polarization and wake-up free ferroelectric characteristics in ultrathin Hf_0.5Zr_0.5O₂ devices by control of oxygen-deficient layer. Nanotechnology. 2022, 33(8), 085206. ISSN 0957-4484. E-ISSN 1361-6528. Dostupné z: doi: 10.1088/1361-6528/ac3a38.