Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

HÁJEK, F., HOSPODKOVÁ, A., HUBÍK, P., GEDEONOVÁ, Z., HUBÁČEK, T., PANGRÁC, J., KULDOVÁ, K. Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design. Semiconductor Science and Technology. 2021, 36(7), 075016. ISSN 0268-1242. E-ISSN 1361-6641. Dostupné z: doi: 10.1088/1361-6641/abfe9b.