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Rippled Metallic-Nanowire/Graphene/Semiconductor Nanostack for a Gate-Tunable Ultrahigh-Performance Stretchable Phototransistor
- 1.HAIDER, G., WANG, Y. H., FARJANA, J. S., CHIANG, C.-W., FRANK, O., VEJPRAVOVÁ, J., KALBÁČ, M., CHEN, Y.-F. Rippled Metallic-Nanowire/Graphene/Semiconductor Nanostack for a Gate-Tunable Ultrahigh-Performance Stretchable Phototransistor. Advanced Optical Materials. 2020, 8(19), 2000859. ISSN 2195-1071. E-ISSN 2195-1071. Dostupné z: doi: 10.1002/adom.202000859.
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