Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond

REMEŠ, Z., STUCHLÍK, J., STUCHLÍKOVÁ, T.-H., DRAGOUNOVÁ, K., ASHCHEULOV, P., TAYLOR, A., MORTET, V., PORUBA, A. Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond. Physica Status Solidi A. 2019, 216(21), 1-6), 1900241. ISSN 1862-6300. E-ISSN 1862-6319. Dostupné z: doi: 10.1002/pssa.201900241.