Počet záznamů: 1
Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 μm bands
- 1.HAZDRA, P., OSWALD, J., KOMARNITSKYY, V., KULDOVÁ, K., HOSPODKOVÁ, A., HULICIUS, E., PANGRÁC, J. Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 μm bands. Journal of Nanoscience and Nanotechnology. 2011, 11(8), 6804-6809. ISSN 1533-4880. Dostupné z: doi: 10.1166/jnn.2011.4223
Počet záznamů: 1