Increasing scintillator active region thickness by InGaN/GaN QW number

VANĚK, Tomáš, HOSPODKOVÁ, Alice, HUBÁČEK, Tomáš, KULDOVÁ, Karla, OSWALD, Jiří, PANGRÁC, Jiří, DOMINEC, Filip, ZÍKOVÁ, Markéta, VETUSHKA, Aliaksi. Increasing scintillator active region thickness by InGaN/GaN QW number. In: Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018, s. 151-151.