Počet záznamů: 1
Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design
- 1.HÁJEK, František, HOSPODKOVÁ, Alice, HUBÍK, Pavel, GEDEONOVÁ, Zuzana, HUBÁČEK, Tomáš, PANGRÁC, Jiří, KULDOVÁ, Karla. Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design. Semiconductor Science and Technology. 2021, 36(7), 075016. ISSN 0268-1242. E-ISSN 1361-6641. Dostupné z: doi: 10.1088/1361-6641/abfe9b.
Počet záznamů: 1