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GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD
- 1.HOSPODKOVÁ, Alice, VYSKOČIL, Jan, ZÍKOVÁ, Markéta, OSWALD, Jiří, PANGRÁC, Jiří, PETŘÍČEK, Otto. GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD. Materials Research Express. 2017, 4(2), 1-8), 025502. E-ISSN 2053-1591. Dostupné z: doi: 10.1088/2053-1591/aa598e
Počet záznamů: 1