Počet záznamů: 1
Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
- 1.0361428 - FZÚ 2013 RIV NL eng J - Článek v odborném periodiku
Hara, K. - Affolder, A.A. - Allport, P.P. - Bates, R. - Betancourt, C. - Böhm, Jan - Brown, H. - Buttar, C. - Carter, J. R. - Casse, G. - Mikeštíková, Marcela … celkem 74 autorů
Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments.
Nuclear Instruments & Methods in Physics Research Section A. Roč. 636, č. 1 (2011), "S83"-"S89". ISSN 0168-9002. E-ISSN 1872-9576
Grant CEP: GA MŠMT LA08032
Výzkumný záměr: CEZ:AV0Z10100502
Klíčová slova: p-bulk silicon * microstrip * charge collection * radiation damage
Kód oboru RIV: BF - Elementární částice a fyzika vys. energií
Impakt faktor: 1.207, rok: 2011
http://dx.doi.org/10.1016/j.nima.2010.04.090
We are developing n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb−1, which is twice the sLHC integrated luminosity goal.
Trvalý link: http://hdl.handle.net/11104/0198740
Počet záznamů: 1