Počet záznamů: 1
Inhomogeneous Luminescence of InGaN/GaN Quantum Wells: Effect of Growth Temperature, Carrier Gas and the Buffer Layer Growth
- 1.Dominec, Filip - Kuldová, Karla - Zíková, Markéta - Pangrác, Jiří - Hospodková, Alice
Inhomogeneous Luminescence of InGaN/GaN Quantum Wells: Effect of Growth Temperature, Carrier Gas and the Buffer Layer Growth.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 153-153.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
http://hdl.handle.net/11104/0289034
Počet záznamů: 1