Inhomogeneous Luminescence of InGaN/GaN Quantum Wells: Effect of Growth Temperature, Carrier Gas and the Buffer Layer Growth

Dominec, F., Kuldová, K., Zíková, M., Pangrác, J., Hospodková, A. Inhomogeneous Luminescence of InGaN/GaN Quantum Wells: Effect of Growth Temperature, Carrier Gas and the Buffer Layer Growth. In: Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018, s. 153-153.