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Inhomogeneous Luminescence of InGaN/GaN Quantum Wells: Effect of Growth Temperature, Carrier Gas and the Buffer Layer Growth
- 1.DOMINEC, F., KULDOVÁ, K., ZÍKOVÁ, M., PANGRÁC, J., HOSPODKOVÁ, A. Inhomogeneous Luminescence of InGaN/GaN Quantum Wells: Effect of Growth Temperature, Carrier Gas and the Buffer Layer Growth. In: Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018, s. 153-153.
Počet záznamů: 1