Počet záznamů: 1
Inhomogeneous Luminescence of InGaN/GaN Quantum Wells: Effect of Growth Temperature, Carrier Gas and the Buffer Layer Growth
- 1.DOMINEC, Filip, KULDOVÁ, Karla, ZÍKOVÁ, Markéta, PANGRÁC, Jiří, HOSPODKOVÁ, Alice. Inhomogeneous Luminescence of InGaN/GaN Quantum Wells: Effect of Growth Temperature, Carrier Gas and the Buffer Layer Growth. In: Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018, s. 153-153.
Počet záznamů: 1