Silicon Nanowires Grown on Metal Substrates via Self-Catalyst Mechanism

0446075 - ÚCHP 2016 RIV NL eng J - Článek v odborném periodiku
Dřínek, Vladislav - Klementová, Mariana - Fajgar, Radek - Dytrych, Pavel
Silicon Nanowires Grown on Metal Substrates via Self-Catalyst Mechanism.
Materials Letters. Roč. 160, DEC 1 (2015), s. 109-112. ISSN 0167-577X. E-ISSN 1873-4979
Grant CEP: GA ČR GA13-25747S
Institucionální podpora: RVO:67985858 ; RVO:68378271
Klíčová slova: CVD * silicon * nanowire
Kód oboru RIV: CA - Anorganická chemie
Impakt faktor: 2.437, rok: 2015

Low Pressure Chemical Vapor Deposition (LPCVD) was applied to grow Silicon Nanowires (SiNWs) without any heteroatom catalyst or special pretreatment of substrates used. Silane (SiH4) as a precursor was pyrolyzed at 500 °C in an oven at molybdenum or iron substrates. NWs were several microns long, about 100 nm thick and possessed a core-jacket structure. The thin core was composed of crystalline silicon oriented in 110 direction whereas the jacket was formed by amorphous silicon. Unlike other approaches, this method avoids contamination caused by metal heteroatom seeds and/or applying special procedures for substrate pretreatment to initilize/support NW growth. The photocalytical activity revealed that SiNW layers could be accredited with a relatively high rate of photocatalytical splitting of water into H2/O2.
Trvalý link: http://hdl.handle.net/11104/0253987