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Quantitative depth profiling of K-doped fullerene films using XPS and SIMS

  1. 1.
    0031295 - ÚFCH JH 2006 AT eng J - Článek v odborném periodiku
    Oswald, S. - Janda, Pavel - Dunsch, L.
    Quantitative depth profiling of K-doped fullerene films using XPS and SIMS.
    Microchimica Acta. Roč. 141, 1-2 (2003), s. 79-85. E-ISSN 1436-5073
    Výzkumný záměr: CEZ:AV0Z4040901
    Klíčová slova: XPS * SIMS * depth profiling * fullerenes * doping
    Kód oboru RIV: CG - Elektrochemie
    Impakt faktor: 0.784, rok: 2003

    Phenomena accompanying electrochemical doping of solid fullerene films with potassium were studied by sputter ion depth profiling (XPS and SIMS). The potassium distribution was determined, and artifacts associated with possible damage of the layer composition caused by ion impact were investigated and discussed. To compare the charge transfer while reductive doping is taking place at fullerene/solution interface with doping from gas phase, model layers were prepared and doped by potassium under UHV conditions. It was found that sputtering by Ar+ primary ions yields both accurate information on the alkaline metal distribution and on its concentration. Sputtering by O+ ions led to an enrichment of potassium, apparently due to the reactivity of oxygen with the fullerene matrix. It is shown that the reductive doping starts at the fullerene/solution interface. The concentration of potassium in the doped films was found to be lower than expected from the charge transferred during the electrochemical reduction. Other phase transformations such as hydrogenation are discussed.
    Trvalý link: http://hdl.handle.net/11104/0132039
Počet záznamů: 1