Počet záznamů: 1
Optical and transport properties of ZnO thin films prepared by reactive pulsed mid-frequency sputtering combined with RF ECWR plasma
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SYSNO ASEP 0618934 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Ostatní články Název Optical and transport properties of ZnO thin films prepared by reactive pulsed mid-frequency sputtering combined with RF ECWR plasma Tvůrce(i) Remeš, Zdeněk (FZU-D) RID, ORCID
Hubička, Zdeněk (FZU-D) RID, ORCID, SAI
Hubík, Pavel (FZU-D) RID, ORCIDCelkový počet autorů 3 Číslo článku 590 Zdroj.dok. Nanomaterials. - : MDPI - ISSN 2079-4991
Roč. 15, č. 8 (2025)Poč.str. 14 s. Jazyk dok. eng - angličtina Země vyd. CH - Švýcarsko Klíč. slova ZnO ; optical absorptance ; photoluminescence ; sputtering ; Hall effect Vědní obor RIV BM - Fyzika pevných látek a magnetismus Obor OECD Condensed matter physics (including formerly solid state physics, supercond.) CEP EH22_008/0004596 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy GC24-10607J GA ČR - Grantová agentura ČR Způsob publikování Open access Institucionální podpora FZU-D - RVO:68378271 DOI https://doi.org/10.3390/nano15080590 Anotace The study explores the optical and transport properties of polycrystalline ZnO thin films prepared using reactive pulsed mid-frequency sputtering with RF electron cyclotron wave resonance (ECWR) plasma. This deposition method increases the ionization degree of sputtered particles, the dissociation of reactive gas and the plasma density of pulsed reactive magnetron plasma. Optical absorption spectra reveal a sharp Urbach edge, indicating low valence band disorder. Lattice disorder and deep defect concentration are more likely to occur in samples with higher roughness. PL analysis at low temperature reveals in all samples a relatively slow (µs) red emission band related to deep bulk defects. The fast (sub-ns), surface-related blue PL band was observed in some samples. Blue PL disappeared after annealing in air at 500 C. Room temperature Hall effect measurements confirm n-type conductivity, though with relatively low mobility, suggesting defect-related scattering. Persistent photoconductivity was observed under UV illumination, indicating deep trap states affecting charge transport. These results highlight the impact of deposition and post-treatment on polycrystalline ZnO thin films, offering insights into optimizing their performance for optoelectronic applications, such as UV detectors and transparent conductive oxides. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2026 Elektronická adresa https://hdl.handle.net/11104/0365730
Počet záznamů: 1