Počet záznamů: 1  

Dataset thin film growth of [Ni(Hvanox)2] NanoscaleAdv

  1. 1.
    SYSNO ASEP0618314
    Zařazení RIVZáznam nebyl označen do RIV
    NázevDataset thin film growth of [Ni(Hvanox)2] NanoscaleAdv
    Tvůrce(i) Sapre, Atharva Umesh (FZU-D) ORCID
    Vlček, Jan (FZU-D) RID, ORCID
    de Prado, Esther (FZU-D) ORCID, RID
    Fekete, Ladislav (FZU-D) RID, ORCID
    Klementová, Mariana (FZU-D) RID, ORCID
    Vondráček, Martin (FZU-D) RID, ORCID
    Svora, Petr (FZU-D) ORCID
    Cuza, E. (IE)
    Morgan, G.G. (IE)
    Honolka, Jan (FZU-D) RID, ORCID
    Kühne, Irina A. (FZU-D) ORCID
    Jazyk dok.eng - angličtina
    Klíč. slovathin film ; coordination complex ; Ni(II) ; film growth ; thickness dependence
    Obor OECDPhysical chemistry
    CEPEH22_008/0004596 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy
    GA23-05878S GA ČR - Grantová agentura ČR
    LM2023051 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy
    Institucionální podporaFZU-D - RVO:68378271
    DOI https://doi.org/10.57680/asep.0618314
    AnotaceWe have investigated [Ni(Hvanox)2] (H2vanox = o-vanillinoxime), a square-planar Ni(II) complex, for the preparation of thin films using organic molecule evaporation. Low pressure experiments to prepare thin films were conducted at temperatures between 120–150 °C and thin films of increasing thicknesses [Ni(Hvanox)2] (16–336 nm) have been prepared on various substrates and been analyzed by microscopic and spectroscopic methods. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to reveal a rough surface morphology which exhibits a dense arrangement of elongated, rod and needle-like nanocrystals with random orientations. It also enabled us to follow the growth of the thin films by increasing thickness revealing the formation of a seeding layer. X-ray photoelectron spectroscopy (XPS and 3D ED), TEM and X-ray diffraction (XRD) were utilized to confirm the atomic structure and the elemental composition of the thin films.
    PracovištěFyzikální ústav
    KontaktKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Rok sběru2026
Počet záznamů: 1  

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