Ji, Y., Frentrup, M., Zhang, X., Pongrácz, J., Fairclough, S. M., Liu, Y., Zhu, T., Oliver, R. A. Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation. Journal of Applied Physics. 2023, 134(14), 145102. ISSN 0021-8979. E-ISSN 1089-7550. Dostupné z: https://doi.org/10.1063/5.0165066.