Počet záznamů: 1
Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems
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SYSNO ASEP 0575228 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems Tvůrce(i) Cheah, E. (CH)
Haxell, D.Z. (CH)
Schott, R. (CH)
Zeng, P. (CH)
Paysen, E. (DE)
ten Kate, S.C. (CH)
Coraiola, M. (CH)
Landstetter, M. (CH)
Zadeh, A.B. (CH)
Trampert, A. (DE)
Sousa, M. (CH)
Riel, H. (CH)
Nichele, F. (CH)
Wegscheider, W. (CH)
Křížek, Filip (FZU-D) ORCIDCelkový počet autorů 15 Číslo článku 073403 Zdroj.dok. Physical Review Materials. - : American Physical Society - ISSN 2475-9953
Roč. 7, č. 7 (2023)Poč.str. 11 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova InAs shallow quantum well ; superconductor semiconductor interface ; epitaxial Al ; hybrid 2DEG Vědní obor RIV BM - Fyzika pevných látek a magnetismus Obor OECD Condensed matter physics (including formerly solid state physics, supercond.) CEP GM22-22000M GA ČR - Grantová agentura ČR Způsob publikování Open access Institucionální podpora FZU-D - RVO:68378271 UT WOS 001051438100004 EID SCOPUS 85166774981 DOI 10.1103/PhysRevMaterials.7.073403 Anotace In situ synthesized semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures and two-dimensional electron gases. In contrast to the well-developed semiconductor parts of the hybrid materials, the direct effect of the crystal nanotexture of Al films on the electron transport still remains unclear. This is mainly due to the complex epitaxial relation between Al and the semiconductor. Here, we present characterization of Al thin films grown on shallow InAs two-dimensional electron gas systems by molecular beam epitaxy. Using a growth approach based on an intentional roughening of the epitaxial interface, we demonstrate growth of grain-boundary-free Al. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2024 Elektronická adresa https://hdl.handle.net/11104/0348792
Počet záznamů: 1