O-band TE- and TM-mode densely packed adiabatically bent waveguide arrays on the silicon-on-insulator platform

0574604 - FZÚ 2024 RIV US eng J - Článek v odborném periodiku
Zafar, H. - Paredes, B. - Villegas, J. - Rasras, M. - Pereira, Mauro Fernandes
O-band TE- and TM-mode densely packed adiabatically bent waveguide arrays on the silicon-on-insulator platform.
Optics Express. Roč. 31, č. 13 (2023), s. 21389-21398. ISSN 1094-4087
GRANT EU: European Commission(XE) 101021857 - ODYSSEUS
Institucionální podpora: RVO:68378271
Klíčová slova: dual-polarization silicon * adiabatically * silicon
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.8, rok: 2022
Způsob publikování: Open access

An efficient, dual-polarization silicon waveguide array with low insertion losses and negligible crosstalks for both TE and TM polarizations has been reported using S-shaped adiabatically bent waveguides. Simulation results for a single S-shaped bend show an insertion loss (IL) of ≤ 0.03 dB and ≤ 0.1 dB for the TE and TM polarizations, respectively, and TE and TM crosstalk values in the first neighboring waveguides at either side of the input waveguide are lower than −39 dB and −24 dB, respectively, over the wavelength range of 1.24 µm to 1.38 µm. The bent waveguide arrays exhibit a measured average TE IL of ≈ 0.1 dB, measured TE crosstalks in the first neighboring waveguides are ≤ −35 dB, at the 1310 nm communication wavelength. The proposed bent array can be made by using multiple cascaded S-shaped bends to transmit signals to all optical components in integrated chips.
Trvalý link: https://hdl.handle.net/11104/0349663