On the melting thresholds of semiconductors under nanosecond pulse laser irradiation

0570949 - FZÚ 2024 RIV CH eng J - Článek v odborném periodiku
Beránek, Jiří - Bulgakov, Alexander - Bulgakova, Nadezhda M.
On the melting thresholds of semiconductors under nanosecond pulse laser irradiation.
Applied Sciences-Basel. Roč. 13, č. 6 (2023), č. článku 3818. E-ISSN 2076-3417
Grant CEP: GA MŠMT EF15_003/0000445
Grant ostatní: OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445
Institucionální podpora: RVO:68378271
Klíčová slova: pulsed laser * nanosecond * laser processing * semiconductors * melting * thermal model * finite difference method * material properties
Obor OECD: Optics (including laser optics and quantum optics)
Impakt faktor: 2.7, rok: 2022
Způsob publikování: Open access

In this work, a unified numerical model is used to determine the melting thresholds and to investigate the early stages of melting of several crystalline semiconductors (Si, Ge, GaAs, CdTe and InP) irradiated by nanosecond laser pulses. A molten fraction approach is used for continuous transition over the melting point. The results are compared with previously published theoretical and experimental data. A survey on the thermophysical and optical properties of the selected materials has been carried out to gather the most relevant data on temperature dependent properties for the solid and liquid states of these semiconductors where such data are available. A generalization of the obtained results is established that enables evaluation of the melting thresholds for different semiconductors based on their properties and irradiation conditions (laser wavelength, pulse duration).
Trvalý link: https://hdl.handle.net/11104/0342286