0558816 - FZÚ 2023 RIV US eng J - Článek v odborném periodiku
Do, E. - Park, J.-W. - Stetsovych, Oleksandr - Jelínek, Pavel - Yeom, H.W.
Z₃ charge density wave of silicon atomic chains on a vicinal silicon surface.
ACS Nano. Roč. 16, č. 4 (2022), s. 6598-6604. ISSN 1936-0851. E-ISSN 1936-086X
Grant CEP: GA ČR(CZ) GX20-13692X
Institucionální podpora: RVO:68378271
Klíčová slova: nc-AFM * DFT * 1D chains * CDW
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 17.1, rok: 2022 ; AIS: 3.712, rok: 2022
Způsob publikování: Open access
DOI: https://doi.org/10.1021/acsnano.2c00972

An ideal one-dimensional electronic system is formed along atomic chains on Au-decorated vicinal silicon surfaces, but the nature of its low-temperature phases has been puzzling for last two decades. Here, we unambiguously identify the low-temperature structural distortion of this surface using high-resolution atomic force microscopy and scanning tunneling microscopy. The most important structural ingredient of this surface, the step-edge Si chains, are found to be strongly buckled, every third atom down, forming trimer unit cells. This observation is consistent with the recent model of rehybridized dangling bonds and rules out the antiferromagnetic spin ordering proposed earlier. The spectroscopy and electronic structure calculation indicate a charge density wave insulator with a Z3 topology, making it possible to exploit topological phases and excitations.
Trvalý link: https://hdl.handle.net/11104/0333948