Počet záznamů: 1
Nanostructuring of PMMA, GaAs, SiC and Si samples by focused XUV laser beam
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SYSNO ASEP 0538597 Druh ASEP C - Konferenční příspěvek (mezinárodní konf.) Zařazení RIV D - Článek ve sborníku Název Nanostructuring of PMMA, GaAs, SiC and Si samples by focused XUV laser beam Tvůrce(i) Frolov, Oleksandr (UFP-V) RID
Koláček, Karel (UFP-V) RID
Schmidt, Jiří (UFP-V) RID
Štraus, Jaroslav (UFP-V) RID
Choukourov, A. (CZ)Celkový počet autorů 5 Číslo článku 110350K Zdroj.dok. Optics Damage and Materials Processing by EUV/X-ray Radiation VII. - Bellingham : SPIE, 2019 / Juha L. ; Bajt S. ; Guizard S. - ISSN 0277-786X - ISBN 978-151062736-9 Rozsah stran roč. 11035 (2019) Poč.str. 6 s. Forma vydání Online - E Akce Conference on Optics Damage and Materials Processing by EUV/X-Ray Radiation VII Datum konání 01.04.2019 - 03.04.2019 Místo konání Praha Země CZ - Česká republika Typ akce WRD Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova Ablation ; Diffraction pattern ; Nanopatterning ; Nanostructuring ; XUV laser Vědní obor RIV BH - Optika, masery a lasery Obor OECD Optics (including laser optics and quantum optics) CEP LTT17015 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Institucionální podpora UFP-V - RVO:61389021 UT WOS 000489750600006 EID SCOPUS 85073908975 DOI 10.1117/12.2521444 Anotace We report results of ablation experiments of different materials through Ni grid with an intense XUV laser beam. As a source of XUV radiation (energy of about 100 ïJ) with wavelength of 46.9 nm was used high-current capillary discharge driver. Ablated footprints were analyzed by optical microscope and by an atomic-force microscope (AFM). It was found that structure and period of diffraction pattern on PMMA sample (both in ablation and desorption area) depend on the distance from grid to the sample surface. Depth of ablation craters in a single window of PMMA for single shot was about of 80 nm, and period changes from 400 nm (on the edge) to 190 nm (in the middle) for grid further from surface, and from 400 nm (on the edge) to 10 nm (in the middle) for closer grid. Contrary to this, no diffraction patterns in ablation region and only slightly visible on the edge in the desorption region were observed on the surface of GaAs, SiC and Si samples for single shot. Depth of ablated craters in ablation region was about 100 nm for GaAs, 20 nm for Si and up to 5 nm for SiC. In desorption region depth of ablated craters is relatively shallow (up to 5 nm for GaAs and up to 2 nm for Si and SiC). In the case of irradiation samples by 5 shots ablated craters are deeper, but situation with diffraction pattern is the same as in the case of single shot for all materials. Pracoviště Ústav fyziky plazmatu Kontakt Vladimíra Kebza, kebza@ipp.cas.cz, Tel.: 266 052 975 Rok sběru 2021 Elektronická adresa https://www.spiedigitallibrary.org/conference-proceedings-of-spie/11035/110350K/Nanostructuring-of-PMMA-GaAs-SiC-and-Si-samples-by-focused/10.1117/12.2521444.short?SSO=1
Počet záznamů: 1