Towards quantitative interpretation of Fourier-transform photocurrent spectroscopy on thin-film solar cells

0538302 - FZÚ 2021 RIV CH eng J - Článek v odborném periodiku
Holovský, Jakub - Stuckelberger, M. - Finsterle, T. - Conrad, B. - Amalathas, A.P. - Müller, Martin - Haug, F.J.
Towards quantitative interpretation of Fourier-transform photocurrent spectroscopy on thin-film solar cells.
Coatings. Roč. 10, č. 9 (2020), s. 1-9, č. článku 820. E-ISSN 2079-6412
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA ČR GA18-24268S
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: solar cells * photocurrent spectroscopy * defect density * amorphous silicon * open-circuit voltage * radiative limit
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 2.881, rok: 2020
Způsob publikování: Open access

The method of detecting deep defects in photovoltaic materials by Fourier-Transform Photocurrent Spectroscopy is reviewed. As new materials appear, a prediction of potentially achievable open-circuit voltage is highly desirable. From thermodynamics, a prediction can be made based on the radiative limit, neglecting non-radiative recombination and carrier transport effects. Beyond this, more accurate analysis has to be done. We analyzed a series of hydrogenated amorphous silicon solar cells of different thicknesses at different states of light soaking. Combining empirical results with optical, electrical and thermodynamic simulations, we provide a predictive model of the open-circuit voltage for a given defect density and absorber thickness. We observed that, rather than defect density or thickness, it is the total number of defects, that matters. Alternatively, including defect absorption into the thermodynamic radiative limit gives also useful upper bound to the open-circuit voltage.
Trvalý link: http://hdl.handle.net/11104/0316124