Počet záznamů: 1
Illumination-dependent requirements for heterojunctions and carrier-selective contacts on silicon
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SYSNO ASEP 0536704 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Illumination-dependent requirements for heterojunctions and carrier-selective contacts on silicon Tvůrce(i) Conrad, B. (CZ)
Antognini, L. (CH)
Amalathas, A.P. (CZ)
Boccard, M. (CH)
Holovský, Jakub (FZU-D) RID, ORCIDCelkový počet autorů 5 Zdroj.dok. IEEE Journal of Photovoltaics. - : Institute of Electrical and Electronics Engineers - ISSN 2156-3381
Roč. 10, č. 5 (2020), s. 1214-1225Poč.str. 12 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova carrier selective contacts ; heterojunctions ; photovoltaic cells ; silicon devices ; simulation Vědní obor RIV JA - Elektronika a optoelektronika, elektrotechnika Obor OECD Electrical and electronic engineering CEP GA18-24268S GA ČR - Grantová agentura ČR Způsob publikování Omezený přístup Institucionální podpora FZU-D - RVO:68378271 UT WOS 000562057700002 EID SCOPUS 85090159305 DOI 10.1109/JPHOTOV.2020.2998900 Anotace High efficiency silicon solar cells generally feature carrier-selective contacts, for which there is interest in using a wide range of materials. The electrical and optical requirements that these layers must fulfill have been investigated previously for standard test conditions. Here, we investigate how the required work functions and layer thickness differ under other illumination conditions. The differences will be important for the optimization of tandem device subcells, and for devices which are intended for use in low-light conditions or under low-level concentration. Heterojunction cells are fabricated and the effect of reduced contact thickness and doping at different illumination levels is experimentally demonstrated. Simulations of a-Si/c-Si heterojunctions and ideal metal-semiconductor junctions reveal a logarithmic variation with illumination level of 0.1–10 suns in the electrode work function, and the heterojunction contact layer work function and thickness required. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2021 Elektronická adresa https://doi.org/10.1109/JPHOTOV.2020.2998900
Počet záznamů: 1