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GaP/Si(001) interface study by XPS in combination with Ar gas cluster ion beam sputtering
- 1.Romanyuk, O., Gordeev, I., Paszuk, A., Supplie, O., Stoeckmann, J.P., Houdková, J., Ukraintsev, E., Bartoš, I., Jiříček, P., Hannappel, T. GaP/Si(001) interface study by XPS in combination with Ar gas cluster ion beam sputtering. Applied Surface Science. 2020, 514(Jun), 1-8), 145903. ISSN 0169-4332. E-ISSN 1873-5584. Dostupné z: doi: 10.1016/j.apsusc.2020.145903.
Počet záznamů: 1