0535332 - FZÚ 2021 RIV CH eng J - Článek v odborném periodiku
Šebesta, J. - Carva, K. - Kriegner, Dominik - Honolka, Jan
Twin domain structure in magnetically doped Bi₂Se₃ topological insulator.
Nanomaterials. Roč. 10, č. 10 (2020), s. 1-18, č. článku 2059. E-ISSN 2079-4991
Grant CEP: GA ČR GA19-13659S
Institucionální podpora: RVO:68378271
Klíčová slova: topological insulators * magnetic doping * defects * ab initio
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 5.076, rok: 2020
Způsob publikování: Open access

Twin domains are naturally present in the topological insulator Bi2Se3 and strongly affect its properties. While studies of their behavior in an otherwise ideal Bi2Se3 structure exist, little is known about their possible interaction with other defects. Extra information is needed, especially for the case of an artificial perturbation of topological insulator states by magnetic doping, which has attracted a lot of attention recently. Employing ab initio calculations based on a layered Green’s function formalism, we study the interaction between twin planes in Bi2Se3. We show the influence of various magnetic and nonmagnetic chemical defects on the twin plane formation energy and discuss the related modification of their distribution.

Trvalý link: http://hdl.handle.net/11104/0313386