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Gate voltage impact on charge mobility in end-on stacked conjugated oligomers
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SYSNO ASEP 0523816 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Gate voltage impact on charge mobility in end-on stacked conjugated oligomers Tvůrce(i) Sun, S.-J. (CN)
Menšík, Miroslav (UMCH-V) RID
Toman, Petr (UMCH-V) RID, ORCID
Chung, C.-H. (CN)
Ganzorig, C. (MN)
Pfleger, Jiří (UMCH-V) RID, ORCIDZdroj.dok. Physical Chemistry Chemical Physics. - : Royal Society of Chemistry - ISSN 1463-9076
Roč. 22, č. 15 (2020), s. 8096-8108Poč.str. 13 s. Jazyk dok. eng - angličtina Země vyd. GB - Velká Británie Klíč. slova organic FET transistors ; conductive polymers ; organic electronics Vědní obor RIV CD - Makromolekulární chemie Obor OECD Polymer science CEP GA17-03984S GA ČR - Grantová agentura ČR TE01020022 GA TA ČR - Technologická agentura ČR LO1507 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Způsob publikování Omezený přístup Institucionální podpora UMCH-V - RVO:61389013 UT WOS 000529178800039 EID SCOPUS 85083546368 DOI https://doi.org/10.1039/C9CP06477J Anotace We present a model of the charge transport in thin film organic field-effect transistors with the active channel made of linear conjugated chains stacked on the substrate with end-on-orientation. The transport was simulated in a box consisting of 25 polymer chains, in which the delocalized quantum orbital eigenstates of the on-chain hole distribution were calculated. The inter-chain charge transfer was solved semi-classically. The full self-consistent distribution of charge density and electric field was determined for various applied gate and source–drain voltages. We found that the dependence of charge mobility on gate voltage is not monotonic: it first increases with increasing gate voltage for a limited interval of the latter, otherwise it decreases with the gate voltage. Next, we found formation of the second resonant peak for higher gate voltages. The mobility dependence on the gate voltage confirmed that the current flowing through the active semiconductor layer should be described not only as the hole transfer between adjacent repeat units of the neighbouring chains, but also as the transfer of coherences among on-chain repeat units. The presented model can also give a new insight into the charge transport in organic field-effect transistors with a novel vertical architecture. Pracoviště Ústav makromolekulární chemie Kontakt Eva Čechová, cechova@imc.cas.cz ; Tel.: 296 809 358 Rok sběru 2021 Elektronická adresa https://pubs.rsc.org/en/content/articlelanding/2020/CP/C9CP06477J#!divAbstract
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