Počet záznamů: 1
WO.sub.3./sub. thin films prepared by sedimentation and plasma sputtering
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SYSNO ASEP 0474060 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název WO3 thin films prepared by sedimentation and plasma sputtering Tvůrce(i) Olejníček, Jiří (FZU-D) RID, ORCID
Brunclíková, Michaela (FZU-D) RID
Kment, Š. (CZ)
Hubička, Zdeněk (FZU-D) RID, ORCID, SAI
Kmentová, N. (CZ)
Kšírová, Petra (FZU-D) RID, ORCID
Čada, Martin (FZU-D) RID, ORCID, SAI
Zlámal, M. (CZ)
Krýsa, J. (CZ)Celkový počet autorů 9 Zdroj.dok. Chemical Engineering Journal. - : Elsevier - ISSN 1385-8947
Roč. 318, Jun (2017), s. 281-288Poč.str. 8 s. Jazyk dok. eng - angličtina Země vyd. NL - Nizozemsko Klíč. slova WO3 ; thin films ; water splitting ; pulsed magnetron sputtering ; sedimentation ; photo-electro-chemistry Vědní obor RIV BL - Fyzika plazmatu a výboje v plynech Obor OECD Fluids and plasma physics (including surface physics) CEP TF01000084 GA TA ČR - Technologická agentura ČR GA15-00863S GA ČR - Grantová agentura ČR TA03010743 GA TA ČR - Technologická agentura ČR GAP108/12/2104 GA ČR - Grantová agentura ČR Institucionální podpora FZU-D - RVO:68378271 UT WOS 000399851600033 EID SCOPUS 85016318309 DOI 10.1016/j.cej.2016.09.083 Anotace Tungsten trioxide (WO3) semiconducting thin films were prepared by (i) sedimentation process, (ii) reactive magnetron sputtering from tungsten target under various modes of plasma excitation and (iii) combination of both methods. All samples were deposited on FTO (fluorine-doped tin oxide) coated glass substrate and were annealed after deposition under open air conditions in 450 C in order to improve their crystallinity and semiconductor properties. This study deals with a comparison of photo-electrochemical properties of the layers prepared by the methods mentioned above. After annealing, all the prepared WO3 films revealed monoclinic crystalline structure while the as-deposited samples were amorphous. Different orientation of crystallites was found for different mode of discharge pulsing in plasma prepared samples. The presence of crystalline WO3 is essential for significant photocurrent response. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2018
Počet záznamů: 1