Počet záznamů: 1
Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing
- 1.
SYSNO ASEP 0467514 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing Tvůrce(i) Krivyakin, G.K. (RU)
Volodin, V. (RU)
Kochubei, S.A. (RU)
Kamaev, G.N. (RU)
Purkrt, Adam (FZU-D) RID
Remeš, Zdeněk (FZU-D) RID, ORCID
Fajgar, Radek (UCHP-M) RID, ORCID, SAI
Stuchlíková, The-Ha (FZU-D) RID, ORCID
Stuchlík, Jiří (FZU-D) RID, ORCIDZdroj.dok. Semiconductors - ISSN 1063-7826
Roč. 50, č. 7 (2016), s. 935-940Poč.str. 6 s. Jazyk dok. eng - angličtina Země vyd. RU - Rusko Klíč. slova hydrogenated amorphous silicon ; nanocrystals ; laser annealing Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEP LH12236 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Institucionální podpora FZU-D - RVO:68378271 ; UCHP-M - RVO:67985858 UT WOS 000379173600016 EID SCOPUS 84978166207 DOI https://doi.org/10.1134/S1063782616070101 Anotace Si nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 to 250 mJ/cm2 (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR) range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2017
Počet záznamů: 1