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Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates
- 1.MORTET, V., PERNOT, J., JOMARD, F., SOLTANI, A., REMEŠ, Z., BARJON, J., D´HAEN, J., HAENEN, K. Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates. Diamond and Related Materials. 2015, 35(Mar), 29-34. ISSN 0925-9635. E-ISSN 1879-0062. Dostupné z: doi: 10.1016/j.diamond.2015.01.006
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