Generating ordered Si nanocrystals via atomic force microscopy

0383786 - FZÚ 2013 RIV NL eng J - Článek v odborném periodiku
Verveniotis, Elisseos - Šípek, Emil - Stuchlík, Jiří - Kočka, Jan - Rezek, Bohuslav
Generating ordered Si nanocrystals via atomic force microscopy.
Journal of Non-Crystalline Solids. Roč. 358, č. 17 (2012), 2118–2121. ISSN 0022-3093. E-ISSN 1873-4812
Grant CEP: GA ČR GD202/09/H041; GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: AFM * CS-AFM * a-Si:H * electric crystallization * nickel
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.597, rok: 2012

We describe two successful routes for generating ordered arrays of Si nanocrystals by using atomic force microscopy (AFM) and amorphous silicon thin films (200–400 nm) on Ti/Ni coated glass substrates. First, we show that field-enhanced metal-induced solid phase crystallization at room temperature can be miniaturized to achieve highly spatially localized (below 100 nm) current-induced crystallization of the amorphous silicon films using a sharp tip in AFM. In the second route, resistive nano-pits are formed at controlled positions in the amorphous silicon thin films by adjusting (lowering and/or stabilizing) the exposure currents in the AFM process. Such templated substrates are further used to induce localized growth of Si nanocrystals in plasma-enhanced chemical vapor deposition process. In both cases the crystalline phase is identified in situ as features of enhanced current in current-sensing AFM maps.
Trvalý link: http://hdl.handle.net/11104/0213623