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Preparation of Si/O/C Nanotubes Using Ge Nanowires as Template
- 1.0380129 - ÚCHP 2013 RIV NL eng J - Článek v odborném periodiku
Krabáč, Lubomír - Klementová, Mariana - Šubrt, Jan - Fajgar, Radek - Kupčík, Jaroslav - Bastl, Zdeněk - Stuchlíková, The-Ha - Dřínek, Vladislav
Preparation of Si/O/C Nanotubes Using Ge Nanowires as Template.
Journal of Analytical and Applied Pyrolysis. Roč. 97, SEP (2012), s. 94-98. ISSN 0165-2370. E-ISSN 1873-250X
Grant CEP: GA ČR GA203/09/1088
Institucionální podpora: RVO:67985858 ; RVO:61388980 ; RVO:68378271 ; RVO:61388955
Klíčová slova: cvd * nanomaterials * germanium
Kód oboru RIV: CF - Fyzikální chemie a teoretická chemie
Impakt faktor: 2.560, rok: 2012 ; AIS: 0.738, rok: 2012
DOI: https://doi.org/10.1016/j.jaap.2012.05.005
The silicon oxycarbide Si/O/C nanotubes were prepared by two-step procedure. First, a nanostructure deposit mainly composed of nanocables with germanium core was synthetized by low pressure chemical vapor deposition (LPCVD) using hexamethyldigermane Ge2Me6 and 1,1,3,3-tetramethyldisilazane (Me2SiH)2NH as the volatile precursors. Second, LPCVD was followed by annealing at 850 °C in vacuum to evaporate germanium core. As a result Si/O/C nanotubes were formed. Various techniques such as Raman spectroscopy, TEM, SEM/EDX, XPS and HRTEM were used to study the physical and chemical properties.
Trvalý link: http://hdl.handle.net/11104/0210924
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