Počet záznamů: 1
Unconventional Imaging with Backscattered Electrons
- 1.
SYSNO ASEP 0367773 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Unconventional Imaging with Backscattered Electrons Author(s) Müllerová, Ilona (UPT-D) RID, SAI, ORCID
Mikmeková, Šárka (UPT-D) RID, SAI, ORCID
Hovorka, Miloš (UPT-D)
Frank, Luděk (UPT-D) RID, SAI, ORCIDNumber of authors 4 Source Title Microscopy and Microanalysis. - : Cambridge University Press - ISSN 1431-9276
Roč. 17, Suppl. 2 (2011), s. 900-901Number of pages 2 s. Language eng - English Country US - United States Keywords SEM ; low energies ; grain contrast ; dopant contrast ; internal stress Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering CEZ AV0Z20650511 - UPT-D (2005-2011) DOI https://doi.org/10.1017/S143192761100537X Annotation Immesrsion of the sample in a scanning electron microscope to strong electric field enables one to acquire the backscattered electrons (BSE) throughout full energy and angle range of emission. BSE emitted at high angles off the surface normal provide extended crystallographic information with high grain contrast sensitive to details including visualization of the internal stress. At very low energies the BSE yield may serve as fingerprinting the grain orientation. The dopant contrast can be obtained via injection of very slow electrons. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2012
Počet záznamů: 1