Počet záznamů: 1
Semiconductor Technologies
- 1.0350480 - ÚFE 2011 HR eng M - Část monografie knihy
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
Role of rare-earth elements in the technology of III-V semiconductors prepared by liquid phase epitaxy.
Semiconductor Technologies. 1. Vukovar: InTech, 2010 - (Grym, J.), s. 295-320. ISBN 978-953-307-080-3
Grant CEP: GA ČR(CZ) GP102/08/P617; GA ČR GA102/06/0153
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: semiconductor technology * rare earth elements * III-V semiconductors
Kód oboru RIV: JJ - Ostatní materiály
Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III–V semiconductors due to REs high affinity toward shallow impurities. We present a unique study of the impact of REs (Tb, Dy, Pr, Tm, Er, Gd, Nd, Lu, Yb, Ce) and their oxides (PrOx, TbOx, Tm2O3, Gd2O3, Eu2O3) on the properties of InP layers and show the application of REs in the device technology: radiation detectors and light emitting diodes based on InGaAsP/InP double heterostructure.
Trvalý link: http://hdl.handle.net/11104/0190478
Počet záznamů: 1