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The influence of doping on the Raman intensity of the D band in single walled carbon nanotubes
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SYSNO ASEP 0334512 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název The influence of doping on the Raman intensity of the D band in single walled carbon nanotubes Tvůrce(i) Kalbáč, Martin (UFCH-W) RID, ORCID
Kavan, Ladislav (UFCH-W) RID, ORCIDZdroj.dok. Carbon. - : Elsevier - ISSN 0008-6223
Roč. 48, č. 3 (2010), s. 832-838Poč.str. 7 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova Raman spectroscopy ; single walled carbon nanotubes ; nanocomposites Vědní obor RIV CG - Elektrochemie CEP GC203/07/J067 GA ČR - Grantová agentura ČR IAA400400911 GA AV ČR - Akademie věd IAA400400804 GA AV ČR - Akademie věd KAN200100801 GA AV ČR - Akademie věd LC510 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy CEZ AV0Z40400503 - UFCH-W (2005-2011) UT WOS 000274004700030 DOI 10.1016/j.carbon.2009.10.036 Anotace The D band in the Raman spectra of single walled carbon nanotubes is considered as an indicator of defects in carbon nanotubes. However, its dependence on charge-transfer doping is generally ignored, despite the studied samples are often naturally doped. We studied the intensity of the D band, the ratio of the intensities of the D band and TG band (ID/ITG) and the ratio of the intensities of the D and G0 band (ID/IG’) in the Raman spectra of the single walled carbon nanotubes in dependence on a doping level. We tested two laser excitation energies viz 2.41 and 1.92 eV, which are in resonance with semiconducting and metallic tubes, respectively in our sample. It is shown that the D band intensity is significantly attenuated in doped carbon nanotubes sample for both semiconducting and metallic tubes. The ID/ITG ratio is weakly dependent on doping for semiconducting tubes but for metallic tubes the ID/ITG ratio exhibits strong dependence on doping. Pracoviště Ústav fyzikální chemie J.Heyrovského Kontakt Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Rok sběru 2011
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