Počet záznamů: 1
Characterization of silicon oxide thin films deposited by plasma enhanced chemical vapour deposition from octamethylcyclotetrasiloxane/oxygen feeds
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SYSNO ASEP 0185122 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Ostatní články Název Characterization of silicon oxide thin films deposited by plasma enhanced chemical vapour deposition from octamethylcyclotetrasiloxane/oxygen feeds Tvůrce(i) Zajíčková, L. (CZ)
Janča, J. (CZ)
Peřina, Vratislav (UJF-V) RIDZdroj.dok. Thin Solid Films. - : Elsevier - ISSN 0040-6090
Roč. 338, - (1999), s. 49-59Poč.str. 11 s. Jazyk dok. eng - angličtina Země vyd. GB - Velká Británie Vědní obor RIV BG - Jaderná, atomová a mol. fyzika, urychlovače Anotace Plasma enhanced chemical vapour deposition (PECVD) of thinoxide films was investigated, changing electrical potential conditions at the substrate electrode (dc, rf coupled orpositive biased). Rf discharge at the frequency of 13.56 MHz was generated in a planar reactor with two internal electrodes. Silicon substrates were placed on the powered electrode. The octamethylcyclotetrasiloxane (OMTS) was chosenas a source of O-Si-O groups in order to test new possibilities in the silicon oxide depositions. The reflectance inthe visible, the transmittance in the infrared region, X-ray photoelectron spectra (XPS) and Rutherford backscattering method (RBS) analyses were applied to describe the deposition rate, the optical properties, the composition and the structure of the deposited films. The comparison among these four methods concerning the film composition and structure is discussed. The pronounced changes in the deposition rate with rf power or dc bias typical of every electrical potential condition were observed. However, other filmcharacteristics seemed to be very similar. The film optical parameters and the atomic composition were close to those of amorphous silicon dioxide. Pracoviště Ústav jaderné fyziky Kontakt Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Rok sběru 2001
Počet záznamů: 1