0134365 - FZU-D 20030263 RIV NL eng J - Článek v odborném periodiku
Němec, F. - Jedelský, J. - Frumar, M. - Munzar, M. - Jelínek, Miroslav - Lančok, Ján
On the optical properties of amorphous Ge-Ga-Se films prepared by pulsed laser deposition.
Journal of Non-Crystalline Solids. 326-327, - (2003), s. 53-57. ISSN 0022-3093. E-ISSN 1873-4812
Grant CEP: GA MŠMT LN00A028; GA ČR GA203/00/0085
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: amorphous Ge-Ga-Se * optical properties * pulsed laser deposition
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.563, rok: 2003

Amorphous Ge-Ga-Se thin films(pure and disprosium doped) were prepared by the laser deposition technique using different energy of the lasre beam pulses. The effects of exposure and thermal annealing below the glass transition temperature on the optical parameters (index of refraction, optical band gap) and the thickness of as-deposited chalcogenide thin films were studied.
Trvalý link: http://hdl.handle.net/11104/0032270