Počet záznamů: 1
InAs .delta.-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy
- 1.Hazdra, P. - Voves, J. - Oswald, Jiří - Hulicius, Eduard - Pangrác, Jiří - Šimeček, Tomislav
InAs .delta.-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy.
Journal of Crystal Growth. Roč. 248, - (2003), s. 328-332. ISSN 0022-0248. E-ISSN 1873-5002
Impakt faktor: 1.414, rok: 2003
http://hdl.handle.net/11104/0032116
Počet záznamů: 1