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InAs .delta.-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy
- 1.Hazdra, P., Voves, J., Oswald, J., Hulicius, E., Pangrác, J., Šimeček, T. InAs .delta.-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy. Journal of Crystal Growth. 2003, 248(-), 328-332. ISSN 0022-0248. E-ISSN 1873-5002.
Počet záznamů: 1