0133826 - FZU-D 20020005 RIV NL eng J - Článek v odborném periodiku
Kuldová, Karla - Oswald, Jiří - Zeman, Jan - Hulicius, Eduard - Pangrác, Jiří - Melichar, Karel - Šimeček, Tomislav
Magneto-photoluminescence study of electronic transitions in InAs/GaAS quantum dot layers.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. Roč. 88, - (2002), s. 247-251. ISSN 0921-5107. E-ISSN 1873-4944
Grant CEP: GA ČR GA202/99/1613; GA ČR GA102/99/0414
Výzkumný záměr: CEZ:AV0Z1010914
Klíčová slova: InAs * GaAs * quantum dots * magneto-luminescence
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Magneto-luminescence of single- and multi-layered self-organised MOCVD grown InAs quantum dots in GaAs has been investigated at 77 k in magnetic fields up to B= 27 T in Faraday configuration.
Trvalý link: http://hdl.handle.net/11104/0031781