0133526 - FZU-D 20010221 RIV US eng J - Článek v odborném periodiku
Strasser, T. - Solterbeck, C. - Schattke, W. - Bartoš, Igor - Cukr, Miroslav - Jiříček, Petr
Valence-band photoemission from GaAs(100)-c(4x4).
Physical Review. B. Roč. 63, - (2001), s. 085309-1-085309-8. ISSN 0163-1829
Výzkumný záměr: CEZ:A02/98:Z1-010-914
Klíčová slova: electronic structure * reconstructed (1001 semiconductor surface * one-step model of photoemission
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.070, rok: 2001

Detailed properties of the electronic structure of the reconstructed (100)semiconductor surface are obtained from the one-step model of photoemission. Unexpected periodicity of a surface resonance, observed in experimental energy distribution curves and explained, should occur often under reconstruction.
Trvalý link: http://hdl.handle.net/11104/0031491